2009. 5. 28 1/2 semiconductor technical data pf2015udf12b esd/emi filter revision no : 2 1,12 : filter channel 1 2,11 : filter channel 2 3,10 : filter channel 3 4,9 : filter channel 4 5,8 : filter channel 5 6,7 : filter channel 6 udfn-12b millimeters dim 2.00 0.10 + _ l k j f 0.40 0.127 0.02+0.03/-0.02 0.20 min 0.50 0.05 + _ 0.40 0.10 + _ 0.20 0.05 + _ 2.50 0.10 + _ 1.35 0.10 + _ 0.25 0.10 + _ top view side view bottom view a b c h g k l j d e f a b c g h d 16 12 7 e pin 1 gnd pad equivalent circuit characteristic symbol rating unit dc power per resistor p r 100 mw power dissipation *p d 600 junction temperature t j 150 ? storage temperature t stg -55 q 150 ? * total package power dissipation type name lot no. t8 a 0 marking 15pf 15pf 200 ? filtern* filtern* gnd electrical characteristics (ta=25 ? ) application h i/o esd protection for mobile handsets, notebook, pdas, etc. h emi filtering for data ports in cell phones, pdas, notebook computers h emi filtering for lcd, camera and chip-to-chip data lines features h emi/rfi filtering h esd protection to iec 61000-4-2 level 4 h low insertion loss h good attenuation of high frequency signals h low clamping voltage h low operating and leakage current h six elements in one package description pf2015udf12b is an emi filter array with electrostatic discharge (esd) protection, which integrates six pi filters (c-r-c). these parts include esd protection diodes on every pin, providing a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge. the pf2015udf12b provides the recommended line termination while implementing a low pass filter to limit emi levels and providing esd protection which exceeds iec 61000-4-2 level 4 standard. the udfn package is a very effective pcb space occupation and a very thin package (0.4mm pitch, 0.5mm height) maximum rating (ta=25 ? ) recommeneded footprint (dimensions in mm) 1.40 0.40 0.30 0.25 0.55 1.66 characteristic symbol test condition min. typ. max. unit reverse stand-off voltage v rwm - - - 5 v reverse breakdown voltage v br i t =1ma 6 - - v reverse leakage current i r v rwm =3.3v - - 1.0 a cutoff frequency fc -3db v line =0v, z source =50 ? , z load =50 ? - 100 - mhz channel resistance r line between input and output 160 200 240 ? line capacitance c line v line =0v dc, 1mhz, between i/o pins and gnd 36 45 54 pf v line =2.5v, 1mhz, between i/o pins and gnd 24 30 36
2009. 5. 28 2/2 pf2015udf12b revision no : 2 diode voltage (v) 0.5 1.5 2.0 0.0 012345 1.0 normalized capacitance diode capacitance vs. input voltage analog crosstalk crosstalk (db) -150 -120 1 10 100 1000 6000 frequency (mhz) -90 -60 -30 0 180 184 188 192 196 200 204 208 212 216 220 -40-200 20406080 resistance r ( ? ) r line - temperature ambient temperature ta ( ) c s 21 - frequency frequency (mhz) -20 0 -40 1 10 100 1000 6000 -30 -10 insertion loss (db)
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